IRFI640GPBF
| Part No | IRFI640GPBF |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 200V 9.8A TO220FP |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
18547
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.1208 | |
| 10 | 2.0784 | |
| 100 | 2.0148 | |
| 1000 | 1.9511 | |
| 10000 | 1.8663 |
Specification
RoHSCompliant
MountThrough Hole
Width4.83 mm
Height9.8 mm
Length10.63 mm
Weight6.000006 g
Fall Time36 ns
Lead FreeLead Free
PackagingBulk
Rise Time51 ns
REACH SVHCUnknown
Rds On Max180 mΩ
Resistance180 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
Case/PackageTO-220-3
Number of Pins3
Input Capacitance1.3 nF
Isolation Voltage2.5 kV
Power Dissipation40 W
Threshold Voltage4 V
Number of Channels1
Number of Elements1
Turn-On Delay Time14 ns
Radiation HardeningNo
Turn-Off Delay Time45 ns
Element ConfigurationSingle
Max Power Dissipation40 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance180 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)9.8 A
Drain to Source Voltage (Vdss)200 V
Drain to Source Breakdown Voltage200 V
