SI2305CDS-T1-GE3
| Part No | SI2305CDS-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 8V 5.8A SOT23-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
39177
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4004 | |
| 10 | 0.3924 | |
| 100 | 0.3804 | |
| 1000 | 0.3684 | |
| 10000 | 0.3524 |
Specification
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Current58 A
Voltage8 V
Fall Time20 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time20 ns
REACH SVHCNo SVHC
Rds On Max50 mΩ
Resistance35 mΩ
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Case/PackageSOT-23
Number of Pins3
Input Capacitance715 pF
Power Dissipation960 mW
Threshold Voltage-1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time20 ns
Radiation HardeningNo
Turn-Off Delay Time40 ns
Element ConfigurationSingle
Max Power Dissipation960 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance28 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)-4.4 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-8 V
Drain to Source Breakdown Voltage-8 V
