SI2309DS-T1-E3
| Part No | SI2309DS-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 60V 1.25A SOT23-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
22548
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4929 | |
| 10 | 0.483 | |
| 100 | 0.4683 | |
| 1000 | 0.4535 | |
| 10000 | 0.4338 |
Specification
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Current12 A
Voltage60 V
Fall Time11.5 ns
Lead FreeLead Free
Rise Time11.5 ns
Rds On Max340 mΩ
Resistance340 mΩ
Case/PackageSOT-23-3
Number of Pins3
Power Dissipation1.25 W
Number of Channels1
Number of Elements1
Turn-On Delay Time10.5 ns
Radiation HardeningNo
Turn-Off Delay Time15.5 ns
Element ConfigurationSingle
Max Power Dissipation1.25 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance340 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-1.25 A
Drain to Source Voltage (Vdss)-60 V
Drain to Source Breakdown Voltage-60 V
