SI7686DP-T1-GE3
| Part No | SI7686DP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 35A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
22957
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3984 | |
| 10 | 1.3704 | |
| 100 | 1.3285 | |
| 1000 | 1.2865 | |
| 10000 | 1.2306 |
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time8 ns
Rise Time16 ns
REACH SVHCUnknown
Rds On Max9.5 mΩ
Case/PackageSOIC
Number of Pins8
Input Capacitance1.22 nF
Power Dissipation5 W
Threshold Voltage3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time13 ns
Radiation HardeningNo
Turn-Off Delay Time23 ns
Element ConfigurationSingle
Max Power Dissipation5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance9.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)17.9 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
