SIR418DP-T1-GE3
| Part No | SIR418DP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 40V 40A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
17881
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3 | |
| 10 | 1.274 | |
| 100 | 1.235 | |
| 1000 | 1.196 | |
| 10000 | 1.144 |
Specification
RoHSCompliant
MountSurface Mount
Weight506.605978 mg
Fall Time12 ns
Rise Time73 ns
REACH SVHCUnknown
Rds On Max5 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs2.4 V
Number of Pins8
Input Capacitance2.41 nF
Power Dissipation5 W
Threshold Voltage2.4 V
Number of Channels1
Number of Elements1
Turn-On Delay Time19 ns
Radiation HardeningNo
Turn-Off Delay Time32 ns
Max Power Dissipation39 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)40 A
Drain to Source Voltage (Vdss)40 V
Drain to Source Breakdown Voltage40 V
