VP2206N3-G
| Part No | VP2206N3-G |
|---|---|
| Manufacturer | Microchip |
| Description | MOSFET P-CH 60V 640MA TO92-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
10100
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.9041 | |
| 10 | 2.846 | |
| 100 | 2.7589 | |
| 1000 | 2.6718 | |
| 10000 | 2.5556 |
Specification
PackageBag
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C640mA (Tj)
DriveVoltage(MaxRdsOn5V, 10V
MinRdsOn)900mOhm @ 3.5A, 10V
RdsOn(Max)@Id3.5V @ 10mA
Vgs-
Vgs(th)(Max)@Id±20V
Vgs(Max)450 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature740mW (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-92-3
SupplierDevicePackageTO-226-3, TO-92-3 (TO-226AA)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
