1N4006G
RoHS

1N4006G

1N4006G

Taiwan Semiconductor

DIODE GEN PURP 800V 1A DO204AL

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1N4006G

Inventory: 14463
Pricing
QTY UNIT PRICE EXT PRICE
1+ 0.357
10+ 0.3499
100+ 0.3391
1000+ 0.3284
10000+ 0.3142
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Specification
PackageTape & Reel (TR),Cut Tape (CT)
Series-
ProductStatusActive
TechnologyStandard
Voltage-DCReverse(Vr)(Max)800 V
Current-AverageRectified(Io)1A
Voltage-Forward(Vf)(Max)@If1 V @ 1 A
SpeedStandard Recovery >500ns, > 200mA (Io)
ReverseRecoveryTime(trr)-
Current-ReverseLeakage@Vr5 µA @ 800 V
Capacitance@Vr10pF @ 4V, 1MHz
FThrough Hole
MountingTypeDO-204AL, DO-41, Axial
Package/CaseDO-204AL (DO-41)
SupplierDevicePackage-55°C ~ 150°C
OperatingTemperature-Junction-
Grade-
Qualification